ZVP2106A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZVP2106A
Buy 2N7007 SUPERTEX, Learn more about 2N7007 N-Channel Enhancement-Mode Vertical DMOS FET - Supertex, Inc, View the manufacturer, and stock, and datasheet pdf for the 2N7007 at Jotrin Electronics. March 2010BS170 / MMBF170N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode field effect High density cell design for low RDS(ON).transistors are produced using Fairchild's proprietary, high Voltage controlled small signal switch.cell density, DMOS technology. ZVP3310F, ZVP3310F Datasheet, ZVP3310F PDF, P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET.
- New 10 pcs Zetex ZVP3310A. P-Channel MOSFET DMOS 100V P-CH E-LINE FET TO-92.
- The CPC3982 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in.
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 0.7 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 0.28 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 100 pf
Сопротивление сток-исток открытого транзистора (Rds): 5 Ohm
Тип корпуса: ELINE
ZVP2106A Datasheet (PDF)
0.1. zvp2106a.pdf Size:53K _diodes
P-CHANNEL ENHANCEMENTZVP2106AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDS(on)=5VGS=-10V D-9V G S-8VE-Line-7VTO92 Compatible-6VABSOLUTE MAXIMUM RATINGS.-5VPARAMETER SYMBOL VALUE UNIT-4V-3.5VDrain-Source Voltage VDS -60 V-8 -10Continuous Drain Current at Tamb=25C ID -280 mAPulsed Drain Current IDM -4 AGate Source V
0.2. zvp2106astob zvp2106astz zvp2106as zvp2106astoa.pdf Size:41K _diodes
P-CHANNEL ENHANCEMENTZVP2106AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDS(on)=5VGS=-10V D-9V G S-8VE-Line-7VTO92 Compatible-6VABSOLUTE MAXIMUM RATINGS.-5VPARAMETER SYMBOL VALUE UNIT-4V-3.5VDrain-Source Voltage VDS -60 V-8 -10Continuous Drain Current at Tamb=25C ID -280 mAPulsed Drain Current IDM -4 AGate Source V
7.1. zvp2106gta zvp2106gtc.pdf Size:61K _diodes
SOT223 P-CHANNEL ENHANCEMENT6G ZVP2106GMODE VERTICAL DMOS FETISSUE 3 MARCH 96 T D V I VD D VGS=S-10V T I D T I V -9V T T V D-8V G-7VABSOLUTE MAXIMUM RATINGS.-6V T V IT-5V-4VD i V I VD V-3.5V i D i T ID -8 -10 I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
7.2. zvp2106g.pdf Size:77K _diodes
SOT223 P-CHANNEL ENHANCEMENT6G ZVP2106GMODE VERTICAL DMOS FETISSUE 3 MARCH 96 T D V I VD D VGS=S-10V T I D T I V -9V T T V D-8V G-7VABSOLUTE MAXIMUM RATINGS.-6V T V IT-5V-4VD i V I VD V-3.5V i D i T ID -8 -10 I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
7.3. zvp2106b.pdf Size:15K _diodes
ZVP2106BMECHANICAL DATAP CHANNEL ENHANCEMENTDimensions in mm (inches)MODE DMOS FETBVDSS - 60V8.89 (0.35)9.40 (0.37)7.75 (0.305)ID(cont) 0.76A8.51 (0.335)RDS(on) 0.54.19 (0.165)4.95 (0.195)0.89max.(0.035)12.70(0.500)7.75 (0.305)min.8.51 (0.335)dia.FEATURES5.08 (0.200)typ. FAST SWITCHING SPEEDS2.542(0.100)1 3 NO SECONDARY
Другие MOSFET... ZVNL535A, ZVP0120A, ZVP0535A, ZVP0540A, ZVP0545A, ZVP0545G, ZVP1320A, ZVP1320F, 2SK2545, ZVP2106G, ZVP2110A, ZVP2110G, ZVP2120A, ZVP2120G, ZVP3306A, ZVP3306F, ZVP3310A.
Dmos Fet Transistor
Список транзисторов
P-channel Enhancement Mode Vertical Dmos Fet
Обновления
Dmos Fet Symbol
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02Vertical Dmos Fet