Ao4468 Mosfet

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30V N-Channel MOSFET, AO4468 datasheet, AO4468 circuit, AO4468 data sheet: AOSMD, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits.

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AO4468
MOSFET N-CH 30V 11.6A 8-SOIC
Alpha & Omega Semiconductor Inc
1.AO4468.pdf (5 pages)
MOSFET N-Channel, Metal Oxide
Logic Level Gate
14 mOhm @ 11.6A, 10V
30V
11.6A
3V @ 250µA
24nC @ 10V
1200pF @ 15V
3.1W
Surface Mount
8-SOIC
Lead free / RoHS Compliant
785-1038-2

Available stocks

Part Number
Quantity
AO4468
AOS
34 800
AO4468
AOSMD
8 000
AO4468
N/A
300
AO4468,26325,SOP-8,VBSEMI
AO4468,26325,SOP-8,VBSEMI
AO4468,30500,SOP-8,TY,2020+
AO4468.,1911,SO8,AO
  • Current page: 1 of 5
Absolute Maximum Ratings T
Drain-Source Voltage
Continuous Drain
Pulsed Drain Current
Avalanche energy L=0.1mH
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
The AO4468 combines advanced trench MOSFET
technology with a low resistance package to provide
and battery protection applications.
DS(ON)
B
C
C
T
T
. This device is ideal for load switch
A
A
Mosfet
=25° C
=25° C
C
A
S
=25° C unless otherwise noted
S
Steady-State
G
Symbol
V
I
E
T
www.aosmd.com
DM
J
GS
D
, I
R
AR
JA
AR
V
R
100% UIS Tested
D
DS
DS(ON)
Typ
59
(at V
Ao4468 Mosfet
GS
=10V)
GS
Maximum
=10V)
10.5
3.1
Ao4468
30
19
2
G
40
24
S
10.5A
< 23m
Units
° C/W
° C/W
° C
V
A
Page 1 of 5

AO4468 Summary of contents

Page 1

... General Description The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal for load switch DS(ON) and battery protection applications. SOIC-8 Top View Absolute Maximum Ratings T =25° C unless otherwise noted A Parameter Drain-Source Voltage ...

Page 2

... FR-4 board with 2oz. Copper still air environment with T =150° C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO4468 Min Typ Max Units =55° C ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 1.8 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =10.5A D 1.0E+01 40 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4468 25° (Volts =4. = =10V GS I =10. 100 125 150 175 200 0 Temperature (° (Note E) 125° C 25° ...

Page 4

... 100 0.00001 Figure 11: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.01 0.1 1 Pulse Width (s) www.aosmd.com AO4468 C iss C oss (Volts =25° 0.001 0.1 10 1000 Pulse Width (s) Ambient (Note F) ...

Page 5

... VDC - DUT Resistive Switching Test Circuit & Waveforms RL Vds + DUT Vdd VDC - Vgs d(on 1 Vds + Vgs Vdd VDC Id - Vgs Diode Recovery Test Circuit & Waveforms Idt Vgs Isd Vdd VDC - Vds www.aosmd.com AO4468 Qg Qgd Charge 90% 10 d(off) t off DSS dI/ Vdd Page ...

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Part Number : MDS1660, MDS1660URH ( = AO4468 )

Function : SMD IC / 30V 11.2A power driver MOSFET

Package : SOP 8 Pin

Manufactueres : Magnachip

Image :

Description

The MDS1660 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Pinout

MDS1660 Datasheet

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